1 1 1/12/01 supertex inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." supertex does not assume responsibility for use of devices described and limits its liabi lity to the replacement of devices determined to be defective due to workmanship. no responsibility is assumed for possible omissions or inaccuracies. circuitry and specifications are subject to c hange without notice. for the latest product specifications, refer to the supertex website: http://www.supertex.com. for complete liability information on all supertex products, refer to the most curre nt databook or to the legal/disclaimer page on the supertex website. VN2222 vn2224 advanced dmos technology these enhancement-mode (normally-off) transistors utilize a vertical dmos structure and supertex s well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertex s vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. n-channel enhancement-mode v ertical dmos fets package options absolute maximum ratings drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. applications ? motor controls ? converters ? amplifiers ? switches ? power supply circuits ? drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) features ? free from secondary breakdown ? low power drive requirement ? ease of paralleling ? low c iss and fast switching speeds ? excellent thermal stability ? integral source-drain diode ? high input impedance and high gain high reliability devices see pages 5-4 and 5-5 for military standard process flows and ordering information. note: see package outline section for dimensions. 1 10 2 3 4 5 6 7 8 9 20 11 19 18 17 16 15 14 13 12 top view t o-92 s g d 20-pin ceramic dip ordering information order number / package bv dss /r ds(on) i d(on) bv dgs (max) (min) to-92 20-pin c-dip 220v 1.25 ? 5.0a VN2222nc 240v 1.25 ? 5.0a vn2224n3 s s s g1 g2 g3 g4 s s s s s nc d1 d2 d3 d4 nc s s
2 symbol parameter min typ max unit conditions bv dss vv gs = 0v, i d = 5ma v gs(th) gate threshold voltage 1.0 3.0 v v gs = v ds , i d = 5ma ? v gs(th) change in v gs(th) with temperature -4 -5 mv/ cv gs = v ds , i d = 5ma i gss gate body leakage 1 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current 50 av gs = 0v, v ds = max rating 5ma v gs = 0v, v ds = 0.8 max rating t a = 125 c i d(on) on-state drain current 2 v gs = 5v, v ds = 25v 510 v gs = 10v, v ds = 25v r ds(on) 1.0 1.5 v gs = 5v, i d = 2a 0.9 1.25 v gs = 10v, i d = 2a ? r ds(on) change in r ds(on) with temperature 1.0 1.4 %/ cv gs = 10v, i d = 2a g fs forward transconductance 1.0 2.2 v ds = 25v, i d = 2a c iss input capacitance 300 350 c oss common source output capacitance 85 150 pf c rss reverse transfer capacitance 20 35 t d(on) turn-on delay time 6 15 t r rise time 16 25 t d(off) turn-off delay time 65 90 t f fall time 30 60 v sd diode forward voltage drop 0.8 1.0 v v gs = 0v, i sd = 100ma t rr reverse recovery time 500 ns v gs = 0v, i sd = 1a notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. package i d (continuous)* i d (pulsed) power dissipation jc ja i dr *i drm @ t c = 25 c c/w c/w to-92 540ma 5.0a 1.0w 125 170 540ma 5.0a * i d (continuous) is limited by max rated t j . thermal characteristics 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 10v v dd r gen 0v 0v switching waveforms and test circuit electrical characteristics (@ 25 c unless otherwise specified) drain-to-source breakdown voltage a VN2222/vn2224 ? static drain-to-source on-state resistance ? v dd = 25v i d = 2a r gen = 10 ? v gs = 0v, v ds = 25v f = 1 mhz ns vn2224 240 VN2222 220
3 t ypical performance curves VN2222/vn2224 output characteristics 10 8 6 4 2 0 v ds (volts) i d (amperes) i d (amperes) saturation characteristics 10 8 6 4 2 0 v ds (volts) maximum rated safe operating area 1 1000 100 10 10 1 0.1 0.01 0.001 v ds (volts) i d (amperes) thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0 0.001 10 0.01 0.1 1 t p (seconds) transconductance vs. drain current 5 4 3 2 1 0 010 5 g fs (siemens) i d (amperes) power dissipation vs. case temperature 0 150 100 50 10 5 0 125 75 25 t c ( c) p d (watts) to-92 t c = 25 c p d = 1w to-92 t a = -55 c v ds = 25v 0102030 50 40 4v 3v 0246 10 8 v gs = 10v 6v 4v 3v t a = 25 c t a = 125 c v gs = 10v 6v 8v 8v to-92 (dc) t c = 25 c
4 1235 bordeaux drive, sunnyvale, ca 94089 tel: (408) 744-0100 ?fax: (408) 222-4895 www.supertex.com 1 1/12/01 ?001 supertex inc. all rights reserved. unauthorized use or reproduction prohibited. t ypical performance curves VN2222/vn2224 gate drive dynamic characteristics q g (nanocoulombs) v gs (volts) t j ( c) v gs(th) (normalized) r ds(on) (normalized) v (th) and r ds variation with temperature on-resistance vs. drain current r ds(on) (ohms) bv dss (normalized) t j ( c) transfer characteristics v gs (volts) i d (amperes) capacitance vs. drain-to-source voltage 400 c (picofarads) v ds (volts) i d (amperes) bv dss variation with temperature 0102 03040 300 200 0 0246810 10 5 -50 0 50 100 150 1.1 1.0 5 2 1.4 1.0 0.4 10 8 6 4 2 024 6 810 -50 0 50 100 150 300 pf v ds = 40v v ds = 10v v gs = 5v v gs = 10v t a = -55 c v ds = 25v 125 c 0246 10 8 0 3 4 f = 1mhz c iss c oss c rss 0.9 733 pf 0.6 0.8 1.2 2.4 2.0 1.6 1.2 0.8 0.4 v th @ 5ma 25 c 0 100 0 1 r ds @ 10v, 2a
|
